Fast, low area self-test for read-only memory
AssigneeSTMicroelectronics International N.V.
InventorsRupesh SINGH, Ankur BAL, Tejas Kumar HOIZAL
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AssigneeSTMicroelectronics International N.V.
InventorsRupesh SINGH, Ankur BAL, Tejas Kumar HOIZAL
Estimating the term…
Methods for performing a fast read-only memory (ROM) test are disclosed. In the first method, a signature is generated by performing a first set of N read operations utilizing an extended read-cycle, followed by a second set of N read operations utilizing an at-speed read-cycle, where N is an integer greater than or equal to 2. The retrieved data is combined using modulo addition and subtraction operations and stored in a signature register. In the second, a signature is generated by performing two read operations utilizing an extended read-cycle, followed by two read operations utilizing an at-speed read-cycle. The retrieved data is combined using exclusive OR (XOR) operations and stored in a signature register. The final signature is compared to a predetermined value to determine if any errors were detected. Both methods provide a robust test capable of detecting various ROM errors while minimizing test time and complexity.
A method for performing a fast read-only memory (ROM) signature test, comprising:
A method for performing a fast read-only memory (ROM) signature test, comprising:
A method for testing a read-only memory (ROM) device, comprising:
Dependencies are inferred from the claim text.