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US 2025/0391702 A1Published application
Method for oxidising a silicon layer
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsFrédéric MILESI, Frédéric MAZEN, Laurent LACHAL, Sébastien KERDILES
Life of this patent
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Abstract
A method for oxidising a silicon layer includes providing a substrate including a silicon layer; implanting at least once sulphur atoms in at least one zone of the silicon layer; wet oxidising said silicon layer implanted.
Claims13
A method for oxidising a silicon layer comprising:
- providing a substrate comprising a silicon layer;
- implanting at least once sulphur atoms in at least one zone of the silicon layer;
- wet oxidising said silicon layer implanted.
Dependencies are inferred from the claim text.