Gallium nitride temperature sensor
AssigneeAnalog Devices, Inc.
InventorsPradeep Kumar Chandrasekar, Brett A. Miwa
Life of this patent
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Abstract
A temperature sensor circuit includes a gallium nitride (GaN) integrated circuit (IC) die including a temperature sensitive two-dimensional electron gas (2DEG) resistive circuit element that includes a 2DEG channel; and a sensing circuit included to sense resistance of the temperature sensitive 2DEG resistive circuit element.
Claims20
A temperature sensor circuit comprising:
- a gallium nitride (GaN) integrated circuit (IC) die including a temperature sensitive two-dimensional electron gas (2DEG) resistive circuit element that includes a 2DEG channel;
- and
- a sensing circuit configured to sense resistance of the temperature sensitive 2DEG resistive circuit element.
A temperature monitoring system, the system comprising:
- a temperature sensitive two-dimensional electron gas (2DEG) resistive circuit element that includes a 2DEG channel;
- and
- a sensing circuit configured to sense a change in resistance with temperature of the temperature sensitive 2DEG resistive circuit element.
A method of monitoring temperature of a gallium nitride (GaN) high electron mobility transistor (HEMT) that is a switching circuit element of a switching regulator circuit, the method comprising:
- producing a temperature sensitive resistance using a temperature sensitive two-dimensional electron gas (2DEG) resistive circuit element that includes a 2DEG channel;
- sensing the temperature sensitive resistance using a sensing circuit;
- and
- producing a measurement of temperature of the GaN HEMT using the sensed temperature sensitive resistance.
Dependencies are inferred from the claim text.