Structures for in-situ reflectance measurement during homo-epitaxy
AssigneeYale University
InventorsJin-ho Kang, Jung Han
Life of this patent
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Abstract
Provided herein are a semiconductor layered structure and a method of producing the same. The semiconductor layered structure includes a substrate layer including a semiconductor material, an index layer on the substrate layer, and at least one reflective layer on the index layer, wherein the substrate layer and the reflective layer include substantially the same refractive indices. The method includes growing, via an epitaxial process, the reflective layer onto the index layer; measuring, via a reflectometer, a thickness of the reflective layer; and terminating the epitaxial process at a desired thickness of the reflective layer.
Claims20
A semiconductor layered structure comprising:
- a substrate layer including a semiconductor material;
- an index layer on the substrate layer;
- and
- at least one reflective layer on the index layer;
- wherein the substrate layer and the reflective layer include substantially the same refractive indices.
The semiconductor layered structure of any one of the previous claims, wherein the reflective layer comprises a vertical cavity surface emitting laser (VCSEL).
A method of producing the semiconductor layered structure according to any one of the previous claims, the method comprising:
- growing, via an epitaxial process, the reflective layer onto the index layer;
- measuring, via a reflectometer, a thickness of the reflective layer;
- and
- terminating the epitaxial process at a desired thickness of the reflective layer.
Dependencies are inferred from the claim text.