# US 2025/0382702 A1 · Laminate for chamber inner wall of semiconductor manufacturing apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2025/0382702 A1 - Document ID: US20250382702A1 - Status: Published application - Kind: A1 - Application number: 19/227,059 - Filed: 2025-06-03 - Published: 2025-12-18 - Earliest claimed: 2024-06-18 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd. - Inventors: CHANGHWAN KIM; Eunsook PARK; Takafumi NOGUCHI; Toshihiro IIZUKA; Kenichi NAGAYAMA - Web page: https://patentgrep.com/patent/US20250382702A1 ## CPC - C23C 16/4404: {Coatings or surface treatment on the inside of the reaction chamber or on parts thereof} - C23C 16/45529: {specially adapted for making a layer stack of alternating different compositions or gradient compositions} - C23C 16/30: Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides - C23C 16/403: {of aluminium, magnesium or beryllium} - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract A laminate for a chamber inner wall of a semiconductor manufacturing apparatus is provided. The laminate prevents layer unevenness from occurring in the chamber inner wall. The laminate has a base material, an amorphous layer on the base material, and a crystalline layer on the amorphous layer. The thickness of the amorphous layer is greater than or equal to 1 nm and less than or equal to 10 nm. The crystalline layer includes yttrium and fluorine, and a density of the crystalline layer is greater than and equal to 4.7 g/cm3 and less than or equal to 5.3 g/cm3. ## Claims ### Claim 1 A laminate for a chamber inner wall of a semiconductor manufacturing apparatus, comprising: a base material; an amorphous layer on the base material; and a crystalline layer on the amorphous layer, wherein the amorphous layer has a thickness of 1 nm or more and 10 nm or less, and wherein the crystalline layer comprises yttrium and fluorine, and wherein the crystalline layer has a density of 4.7 g/cm3 or more and 5.3 g/cm3 or less. ### Claim 2 (depends on 1) The laminate of claim 1, wherein the crystalline layer has at least one peak among 2θ=24.03°±1°, 24.61°±1°, 25.98°±1°, 27.88°±1°, 31.00°±1°, and 36.08°±1° positions in X-ray diffraction measurement using Cu—Kα rays. ### Claim 3 (depends on 1) The laminate of claim 1, wherein the amorphous layer comprises aluminum oxide or yttrium oxide. ### Claim 4 (depends on 1) The laminate of claim 1, wherein the base material comprises at least one of silicon, metal, and ceramic. ### Claim 5 (depends on 4) The laminate of claim 4, wherein the metal is at least one of an aluminum alloy, stainless steel (SUS), titanium, and nickel, and the ceramic is at least one of aluminum oxide, aluminum nitride, silicon carbide, and silicon nitride. ### Claim 6 (depends on 1) The laminate of claim 1, wherein the base material has a thickness of 1 mm or more and 10 mm or less. ### Claim 7 (depends on 1) The laminate of claim 1, wherein a concentration of a component other than Al2O3 or Y2O3 in the amorphous layer is 5 at. % or less. ### Claim 8 (depends on 1) The laminate of claim 1, wherein a concentration of a component other than yttrium and fluorine in the crystalline layer is 5 at. % or less. ### Claim 9 (depends on 1) The laminate of claim 1, wherein the crystalline layer has a thickness of 20 nm or more and 200 nm or less. ### Claim 10 (depends on 1) The laminate of claim 1, wherein the refractive index of the crystalline layer is 1.40 or more and 1.60 or less. ### Claim 11 A laminate for a chamber inner wall of a semiconductor manufacturing apparatus, comprising: a base material; an amorphous layer on the base material; and a crystalline layer on the amorphous layer, wherein the amorphous layer has a thickness of 1 nm or more and 10 nm or less, wherein the crystalline layer is a YF3 layer, and wherein a concentration of a component other than yttrium and fluorine in the crystalline layer is 5 at. % or less. ### Claim 12 (depends on 11) The laminate of claim 11, wherein the crystalline layer has at least one peak among 2θ=24.03°±1°, 24.61°±1°, 25.98°±1°, 27.88°±1°, 31.00°±1°, and 36.08°±1° positions in X-ray diffraction measurement using Cu—Kα rays. ### Claim 13 (depends on 11) The laminate of claim 11, wherein the amorphous layer comprises aluminum oxide or yttrium oxide. ### Claim 14 (depends on 11) The laminate of claim 11, wherein the base material comprises at least one of silicon, metal, and ceramic. ### Claim 15 (depends on 14) The laminate of claim 14, wherein the metal is at least one of an aluminum alloy, stainless steel (SUS), titanium, and nickel, and the ceramic is at least one of aluminum oxide, aluminum nitride, silicon carbide, and silicon nitride. ### Claim 16 (depends on 11) The laminate of claim 11, wherein the base material has a thickness of 1 mm or more and 10 mm. ### Claim 17 (depends on 11) The laminate of claim 11, wherein a concentration of a component other than Al2O3 or Y2O3 in the amorphous layer is 5 at. % or less. ### Claim 18 A laminate for a chamber inner wall of a semiconductor manufacturing apparatus, comprising: a base material; an amorphous layer on the base material; and a crystalline layer on the amorphous layer, wherein the amorphous layer comprises aluminum oxide or yttrium oxide, wherein the crystalline layer is a YF3 layer, and wherein a concentration of a component other than yttrium and fluorine in the crystalline layer is 5 at. % or less. ### Claim 19 (depends on 18) The laminate of claim 18, wherein the base material comprises at least one of silicon, metal, and ceramic. ### Claim 20 (depends on 18) The laminate of claim 18, wherein a concentration of a component other than Al2O3 or Y2O3 in the amorphous layer is 5 at. % or less.