Semiconductor device

A semiconductor device comprising:

• a lower interlayer insulating layer;
• an active pattern spaced apart from an upper surface of the lower interlayer insulating layer in a vertical direction that is perpendicular to the upper surface of the lower interlayer insulating layer, the active pattern extending in a first horizontal direction that is parallel to the upper surface of the lower interlayer insulating layer, the active pattern comprising silicon (Si);
• a first gate electrode on the active pattern and extending in a second horizontal direction that is parallel to the upper surface of the lower interlayer insulating layer and intersects the first horizontal direction;
• a second gate electrode extending in the second horizontal direction and on the active pattern, the second gate electrode spaced apart from the first gate electrode in the first horizontal direction;
• a source/drain region that is between the first gate electrode and the second gate electrode and is on the active pattern;
• a liner layer in contact with a lower surface of the active pattern, the liner layer spaced apart from the upper surface of the lower interlayer insulating layer in the vertical direction, the liner layer comprising an insulating material;
• a first contact isolation layer on a lower part of the first gate electrode, the first contact isolation layer extending from the upper surface of the lower interlayer insulating layer to an uppermost surface of the active pattern in the vertical direction,
• a second contact isolation layer on a lower part of the second gate electrode, the second contact isolation layer extending from the upper surface of the lower interlayer insulating layer to the uppermost surface of the active pattern in the vertical direction, the second contact isolation layer spaced apart from the first contact isolation layer in the first horizontal direction;
• and
• a source/drain contact between the upper surface of the lower interlayer insulating layer and the source/drain region, the source/drain contact electrically connected to the source/drain region, the source/drain contact comprising a first portion in contact with sidewalls of each of the first contact isolation layer and the second contact isolation layer in the first horizontal direction, the source/drain contact comprising a second portion extending into the source/drain region, the liner layer, and the active pattern in the vertical direction, the second portion of the source/drain contact on an upper surface of the first portion of the source/drain contact,
• wherein the sidewall of the first contact isolation layer comprises a first sidewall in contact with the source/drain contact in the first horizontal direction, a second sidewall in contact with each of the liner layer and the active pattern in the first horizontal direction, and a vertex between the first sidewall and the second sidewall,
• wherein a slope profile of the first sidewall of the first contact isolation layer and a slope profile of the second sidewall of the first contact isolation layer are different, and
• wherein at least a portion of the upper surface of the first portion of the source/drain contact is in contact with a lower surface of the liner layer in the vertical direction.

A semiconductor device comprising:

• a lower interlayer insulating layer;
• an active pattern spaced apart from an upper surface of the lower interlayer insulating layer in a vertical direction that is perpendicular to the upper surface of the lower interlayer insulating layer, the active pattern extending in a first horizontal direction that is parallel to the upper surface of the lower interlayer insulating layer, the active pattern comprising silicon (Si):
• a plurality of nanosheets that are on the active pattern and spaced apart from each other in the vertical direction;
• a gate electrode on the active pattern and extending in a second horizontal direction that is parallel to the upper surface of the lower interlayer insulating layer and intersects the first horizontal direction, the gate electrode surrounding at least a portion of the plurality of nanosheets;
• a source/drain region that is on a first side of the gate electrode and is on the active pattern;
• a liner layer in contact with a lower surface of the active pattern, the liner layer spaced apart from the upper surface of the lower interlayer insulating layer in the vertical direction, the liner layer comprising an insulating material;
• a gate insulating layer that is between the active pattern and the gate electrode and is between the plurality of nanosheets and the gate electrode, the gate insulating layer spaced apart from the liner layer in the vertical direction;
• a contact isolation layer on a lower part of the gate electrode, the contact isolation layer extending from the upper surface of the lower interlayer insulating layer to an uppermost surface of the active pattern in the vertical direction, an upper surface of the contact isolation layer being in contact with the gate insulating layer in the vertical direction;
• a source/drain contact between the upper surface of the lower interlayer insulating layer and the source/drain region, the source/drain contact electrically connected to the source/drain region, the source/drain contact comprising a first portion in contact with a sidewall of the contact isolation layer in the first horizontal direction, source/drain contact comprising a second portion extending into the source/drain region, the liner layer, and the active pattern in the vertical direction, the second portion of the source/drain contact on an upper surface of the first portion of the source/drain contact;
• a silicide layer between the source/drain contact and the source/drain region, a lower surface of the silicide layer in contact with the active pattern in the vertical direction;
• and
• a field insulating layer that is on the upper surface of the lower interlayer insulating layer and in contact with the sidewalls of each of the contact isolation layer, the first portion of the source/drain contact, the liner layer and the active pattern in the second horizontal direction,
• wherein the sidewall of the contact isolation layer comprises a first sidewall in contact with the source/drain contact in the first horizontal direction, a second sidewall in contact with each of the source/drain contact, the liner layer, and the active pattern in the first horizontal direction, and a vertex between the first sidewall and the second sidewall,
• wherein the vertex is on a sidewall of the first portion of the source/drain contact in the first horizontal direction,
• wherein a slope profile of the first sidewall of the contact isolation layer and a slope profile of the second sidewall of the contact isolation layer are different, and
• wherein at least a portion of the upper surface of the first portion of the source/drain contact is in contact with a lower surface of the liner layer in the vertical direction.