Semiconductor device having fully oxidized gate oxide layer and method for making the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTsu-Hsiu PERNG, Yun-Chi WU, Chia-Chen CHANG, Cheng-Bo SHU, Jyun-Guan JHOU, Pei-Lun WANG
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Abstract
A method for making a semiconductor device includes forming a ROX layer on a substrate and a patterned silicon oxynitride layer on the patterned ROX layer; conformally forming a dielectric oxide layer to cover the substrate, the patterned silicon oxynitride layer, and the patterned ROX layer; and fully oxidizing the patterned silicon oxynitride layer to form a fully oxidized gate oxide layer on the substrate.
Claims20
A semiconductor device, comprising:
- a substrate;
- and
- a fully oxidized gate oxide layer disposed on the substrate and including
- an input/output (I/O) oxide layer portion, and
- a fully oxidized reduced surface field oxide (ROX) layer portion integrated with the I/O oxide layer portion and having a thickness greater than a thickness of the I/O oxide layer portion.
The semiconductor device as claimed in 1, wherein the fully oxidized ROX layer portion and the I/O oxide layer portion include silicon oxide.
The semiconductor device as claimed in 1, wherein
- the substrate includes a first region having a first type conductivity and a second region having a second type conductivity different from the first type conductivity;
- and
- the I/O oxide layer portion is disposed on first region and the second region.
The semiconductor device as claimed in 1, wherein the fully oxidized ROX layer portion includes:
- a lower layer part connected to the I/O oxide layer portion;
- and
- an upper layer part disposed on the lower layer part and obtained by fully oxidizing a silicon oxynitride layer.
A semiconductor device, comprising:
- a substrate;
- a trench isolation disposed in the substrate;
- and
- a fully oxidized gate oxide layer disposed on the substrate and the trench isolation, and including
- an I/O oxide layer portion, and
- a fully oxidized ROX layer portion integrated with the I/O oxide layer portion, spaced apart from the trench isolation, and having a thickness greater than a thickness of the I/O oxide layer portion.
The semiconductor device as claimed in 8, wherein
- the substrate includes a first region having a first type conductivity and a second region having a second type conductivity different from the first type conductivity;
- the trench isolation is disposed in the first region;
- and
- the I/O oxide layer portion covering the trench isolation.
The semiconductor device as claimed in 8, wherein the fully oxidized ROX layer portion includes:
- a lower layer part connected to the trench isolation through a part of the I/O oxide layer portion;
- and
- an upper layer part disposed on the lower layer part and obtained by fully oxidizing a silicon oxynitride layer.
A semiconductor device, comprising:
- a substrate including a first region having an N-type conductivity and a second region having a P-type conductivity;
- a fully oxidized gate oxide layer disposed on the substrate and including:
- an I/O oxide layer portion disposed on the first region and the second region, and
- a fully oxidized ROX layer portion integrated with the I/O oxide layer portion and disposed on the first region, a thickness of the fully oxidized ROX layer portion being greater than a thickness of the I/O oxide layer portion;
- a poly gate disposed on the I/O oxide layer portion and the fully oxidized ROX layer portion;
- a source region disposed in the second region and adjacent to the poly gate;
- a drain region disposed in the first region and adjacent to the fully oxidized ROX layer portion;
- and
- a body contact region disposed in the second region and adjacent to the source region so that the source region is disposed between the body contact region and the poly gate.
Dependencies are inferred from the claim text.