Self-aligned gate cut

An electronic device, comprising:

• a chip package comprising one or more dies, at least one of the one or more dies comprising
• a first semiconductor region extending in a first direction from a first source or drain region;
• a first gate structure extending in a second direction over the first semiconductor region, the second direction being different than the first direction;
• a second semiconductor region extending in the first direction from a second source or drain region;
• a second gate structure extending in the second direction over the second semiconductor region;
• spacer structures on sidewalls of the first and second gate structures and extending along the second direction with the first and second gate structures;
• a gate cut between the first and second semiconductor regions and separating the first gate structure from the second gate structure along the second direction, the gate cut extending along a third direction through at least a portion of an entire height of the first and second gate structures, wherein a top surface of the gate cut is below a top surface of the spacer structures;
• and
• a dielectric plug on the top surface of the gate cut, wherein the dielectric plug also separates the first gate structure from the second gate structure along the second direction.

An integrated circuit comprising:

• a first semiconductor device having a first semiconductor region extending in a first direction from a first source or drain region, and a first gate structure extending in a second direction over the first semiconductor region, the second direction being different than the first direction;
• a second semiconductor device having a second semiconductor region extending in the first direction from a second source or drain region, and a second gate structure extending in the second direction over the second semiconductor region;
• spacer structures on sidewalls of the first and second gate structures and extending along the second direction with the first and second gate structures;
• and
• a gate cut between the first and second semiconductor devices and separating the first gate structure from the second gate structure along the second direction, the gate cut extending along a third direction through at least a portion of an entire height of the first and second gate structures, the gate cut comprising
• a first section directly contacting a first spacer structure of the spacer structures,
• a second section directly contacting a second spacer structure of the spacer structures, and
• a third section between the first and second sections, wherein the third section extends beyond the first and second sections along the second direction.