Memory device and operating method of the memory device
AssigneeSK hynix Inc.
InventorHee Youl LEE
Life of this patent
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Abstract
A memory device and a method of operating the memory device are provided. The memory device includes memory cells located between a bit line and a source line, pass cells located between the memory cells, word lines coupled to the memory cells, pass word lines coupled to the pass cells, and a voltage generator configured to apply a read voltage to a selected word line among the word lines, a pass voltage to unselected word lines among the word lines, and a compensation voltage to the pass word lines during a read operation, wherein the voltage generator is configured to raise the compensation voltage more rapidly than the pass voltage.
Claims20
A memory device, comprising:
- memory cells located between a bit line and a source line;
- pass cells located between the memory cells;
- word lines coupled to the memory cells;
- pass word lines coupled to the pass cells;
- and
- a voltage generator configured to apply a read voltage to a selected word line among the word lines, a pass voltage to unselected word lines among the word lines, and a compensation voltage to the pass word lines during a read operation,
- wherein the voltage generator is configured to raise the compensation voltage more rapidly than the pass voltage.
A method of operating a memory device, the method comprising:
- applying a compensation voltage to pass word lines located between word lines;
- applying a pass voltage to unselected word lines among the word lines;
- and
- applying a read voltage to a selected word line among the word lines when the compensation voltage rises to a first target level and the pass voltage rises to a second target level,
- wherein the compensation voltage rises to the first target level before the pass voltage rises to the second target level.
A method of operating a memory device, the method comprising:
- turning on, between memory cells included in a memory block and pass cells located between the memory cells, the pass cells;
- turning on unselected memory cells among the memory cells after the pass cells are turned on;
- and
- reading selected memory cells among the memory cells.
Dependencies are inferred from the claim text.