Barrier structure within a microelectronic enclosure

A method comprising:

• applying a dielectric material on at least a portion of an oxide layer disposed on a first substrate and on a microelectromechanical system (MEMS) device disposed on the oxide layer;
• depositing a seed metal on the dielectric material and an exposed portion of the oxide layer;
• depositing a plating photoresist on a first portion of the seed metal;
• electroplating a metal line on a second portion of the seed metal, wherein the metal line forms at least a portion of a barrier structure;
• stripping the plating photoresist and a portion of the dielectric material, and etching the first portion of the seed metal to expose the MEMS device;
• and
• positioning a second substrate relative to the barrier structure to form a cavity.