Wafer formation and processing method

A method comprising:

• attaching a first workpiece to a thermo-compression bonding (TCB) upper chuck of a TCB apparatus, the first workpiece comprising a semiconductor substrate and a silicon oxide layer over the semiconductor substrate;
• attaching a second workpiece to a TCB bottom chuck of the TCB apparatus, the second workpiece comprising a first substrate, wherein the first substrate comprises lithium niobate;
• performing a TCB process using the TCB apparatus to bond a first surface of the first substrate to the first workpiece to form a wafer;
• performing a first annealing process on the wafer at a first temperature;
• and
• performing a second annealing process on the wafer at a second temperature, wherein the second temperature is different from the first temperature.

A method comprising:

• bonding a first surface of a first substrate to a second substrate using thermo-compression bonding (TCB) to form a wafer, wherein a first diameter of the first substrate is smaller than a second diameter of the second substrate, wherein the first substrate comprises lithium niobate, and wherein the first substrate comprises an implantation layer that includes helium atoms;
• performing a first annealing process on the wafer at a first temperature;
• performing a first thinning process on a second surface of the first substrate of the wafer, wherein the second surface is on an opposite side of the first substrate as the first surface;
• and
• after performing the first thinning process, performing a second thinning process to cleave a portion of the first substrate along the implantation layer and reduce a thickness of the first substrate.