Semiconductor device and manufacturing method thereof

Abstract

A semiconductor device includes a substrate and a quantum dot transistor disposed on the substrate and includes a first barrier gate stack, a second barrier gate stack and a first plunger gate stack disposed between the first barrier gate stack and the second barrier gate stack. The first barrier gate stack and the first plunger gate stack are arranged in a first straight axis, the first plunger gate stack and the second barrier gate stack are arranged in a second straight axis, and there is a first angle between the first straight axis and the second straight axis is not equal to 180°.

Dependencies are inferred from the claim text.