X-ray detector with sub-contact doping

An X-ray detector comprising:

• a semiconductor bulk made of Cd(1-x)ZnxTe, wherein x is in a range of 0 to 50%;
• a first contact on the semiconductor bulk, the first contact made of a first material;
• and
• a first contact-semiconductor region, which is part of the semiconductor bulk and is directly or indirectly adjacent to the first contact;
• wherein
• the first contact-semiconductor region is doped with a second material, which differs from the first material, and
• a majority of the semiconductor bulk is not doped with the second material.