US 2025/0366229 A1Published application

Solid-state imaging device

AssigneeSony Semiconductor Solutions Corporation

InventorsTomoki HIRAMATSU, Yusuke SATO

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Abstract

A solid-state imaging device includes: a first electrode, supplied with a fixed voltage, partially surrounding a periphery of a first pixel; a charge transfer layer, transferring electric charge, disposed at least in a region opposed to the first electrode and corresponding to the first pixel; a photoelectric conversion layer, converting light into electric charge, disposed on the charge transfer layer oppositely to the first electrode; an electrode disposed on the photoelectric conversion layer oppositely to the charge transfer layer and supplying a voltage thereto; first and second accumulation electrodes each accumulating electric charge in the charge transfer layer and disposed to be spaced apart on the charge transfer layer oppositely to the photoelectric conversion layer in a region corresponding to the first pixel; and a first control electrode disposed between the first and second accumulation electrodes and transferring one of electric charge accumulated by the first and second accumulation electrodes.

Claims17

Dependent claims

A solid-state imaging device comprising:

a first electrode disposed to surround a portion of a periphery of a first pixel and being supplied with a fixed voltage;
a charge transfer layer disposed at least in a region that is opposed to the first electrode and corresponds to the first pixel, the charge transfer layer transferring electric charge;
a photoelectric conversion layer disposed on the charge transfer layer on a side opposite to the first electrode, the photoelectric conversion layer converting light into electric charge;
an electrode disposed on the photoelectric conversion layer on a side opposite to the charge transfer layer, the electrode supplying the photoelectric conversion layer with a voltage;
a first accumulation electrode and a second accumulation electrode disposed to be spaced apart from each other on the charge transfer layer on a side opposite to the photoelectric conversion layer in a region corresponding to the first pixel, the first accumulation electrode and the second accumulation electrode each accumulating electric charge in the charge transfer layer;
and
a first control electrode disposed between the first accumulation electrode and the second accumulation electrode, the first control electrode transferring one of pieces of electric charge accumulated by the first accumulation electrode and the second accumulation electrode.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application: 18/873,200Filed 27 Apr 2023
Priority: JP 2022-09900820 Jun 2022
Published: 27 Nov 2025
Term ends: Not estimatedThe source records don’t support an estimate.

Classification14 codes

H04N 25/704
SSIS architectures incorporating pixels for producing signals other than image signals: pixels specially adapted for focusing, e.g. phase…
H10F 39/802
Constructional details of image sensors: geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
H04N 25/70
Circuitry of solid-state image sensors [SSIS]; Control thereof: sSIS architectures; Circuits associated therewith
H04N 25/76
SSIS architectures; Circuits associated therewith: addressed sensors, e.g. MOS or CMOS sensors