Semiconductor device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorYuta ENDO
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Abstract
A semiconductor device with high aperture ratio is provided. The semiconductor device includes a transistor and a capacitor having a pair of electrodes. An oxide semiconductor layer formed over the same insulating surface is used for a channel formation region of the transistor and one of the electrodes of the capacitor. The other electrode of the capacitor is a transparent conductive film. One electrode of the capacitor is electrically connected to a wiring formed over the insulating surface over which a source electrode or a drain electrode of the transistor is provided, and the other electrode of the capacitor is electrically connected to one of the source electrode and the drain electrode of the transistor.
Claims8
A semiconductor device comprising:
- a transistor, a capacitor and a display element in a pixel,
- wherein the semiconductor device comprises:
- a first conductive film;
- a first insulating film over the first conductive film;
- a first oxide semiconductor film over the first insulating film;
- a second oxide semiconductor film over the first insulating film;
- a second conductive film over the first oxide semiconductor film;
- a third conductive film over the second oxide semiconductor film;
- a second insulating film over the first oxide semiconductor film;
- a fourth conductive film over the second insulating film;
- a third insulating film over the second conductive film, the third conductive film, the fourth conductive film and the second oxide semiconductor film;
- and
- a light-transmitting conductive film over the third insulating film,
- wherein the first oxide semiconductor film comprises a channel formation region of the transistor,
- wherein the first conductive film comprises a region overlapping the channel formation region,
- wherein the fourth conductive film comprises a region overlapping the channel formation region,
- wherein the second conductive film comprises a region in contact with a surface of the first oxide semiconductor film,
- wherein the third conductive film comprises a region in contact with a surface of the second oxide semiconductor film,
- wherein the third insulating film comprises a region in contact with a surface of the fourth conductive film,
- wherein the light-transmitting conductive film and the second oxide semiconductor film overlap each other with the third insulating film interposed therebetween,
- wherein the second oxide semiconductor film comprises a region configured to be one electrode of the capacitor,
- wherein a bottom surface of the second oxide semiconductor film does not comprise any region in contact with any conductive films,
- wherein the light-transmitting conductive film comprises a region configured to be the other of the capacitor,
- wherein the light-transmitting conductive film comprises a region configured to be a pixel electrode of the display element,
- wherein the display element is an organic electroluminescent element, and
- wherein the light-transmitting conductive film is electrically connected to the transistor.
Dependencies are inferred from the claim text.