Semiconductor device structure and methods of forming the same

A method, comprising:

• forming a fin structure from a substrate;
• recessing a portion of the fin structure to expose a portion of the substrate;
• depositing a first semiconductor material over the portion of the substrate;
• depositing an interlayer dielectric layer over the first semiconductor material;
• forming an opening in the interlayer dielectric layer to expose the first semiconductor material;
• performing an amorphization process to form an amorphous region, wherein the amorphous region includes a portion of the first semiconductor material;
• partially crystallizing the amorphous region to a first crystalline region;
• and
• forming a silicide layer from a remaining portion of the amorphous region.

A semiconductor device structure, comprising:

• a plurality of semiconductor layers disposed;
• and
• a source/drain region disposed adjacent the plurality of semiconductor layers, wherein the source/drain region comprises:
• a first semiconductor material interfacing each semiconductor layer of the plurality of semiconductor layers, wherein the first semiconductor material interfacing a topmost semiconductor layer of the plurality of semiconductor layers has a first dopant concentration, and the first semiconductor material interfacing a semiconductor layer of the plurality of semiconductor layers disposed below the topmost semiconductor layer has a second dopant concentration substantially different than the first dopant concentration;
• and
• a second semiconductor material surrounding the first semiconductor material.