Tungsten deposition on a cobalt surface
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChi-Cheng HUNG, Pei-Wen WU, Yu-Sheng WANG, Pei Shan CHANG
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Abstract
In some implementations, one or more semiconductor processing tools may deposit cobalt material within a cavity of the semiconductor device. The one or more semiconductor processing tools may polish an upper surface of the cobalt material. The one or more semiconductor processing tools may perform a hydrogen soak on the semiconductor device. The one or more semiconductor processing tools may deposit tungsten material onto the upper surface of the cobalt material.
Claims20
A fin field-effect transistor (FinFET), comprising:
- a cobalt-based contact plug within a cavity of the FinFET,
- wherein a ratio of cobalt material of the cobalt-based contact plug in a hexagonal closed-packed phase to cobalt material of the cobalt-based contact plug in a face centered cubic phase is in a range from approximately 55%:45% to approximately 65%:35%;
- and
- a tungsten via disposed on an upper surface of the cobalt-based contact plug.
A fin field-effect transistor (FinFET), comprising:
- a cobalt-based contact plug within a cavity of the FinFET,
- wherein a greater than 50% of cobalt material of the cobalt-based contact plug is in a hexagonal closed-packed phase;
- and
- a tungsten via on an upper surface of the cobalt-based contact plug.
A fin field-effect transistor (FinFET), comprising:
- a source/drain;
- a cavity extending to the source/drain;
- one or more titanium-based layers within the cavity;
- and
- a cobalt-based contact plug in the cavity and on the one or more titanium-based layers.
Dependencies are inferred from the claim text.