Integrated circuit device

An integrated circuit (IC) device comprising:

• a transistor comprising:
• a first gate structure extending in a first direction;
• first and second source/drain (S/D) structures adjacent to the first gate structure in a second direction perpendicular to the first direction and extending across a first elevation in a third direction perpendicular to each of the first and second directions;
• and
• first and second S/D metal portions overlying the respective first and second S/D structures and extending across a second elevation in the third direction;
• a dielectric layer extending across the first elevation in the third direction and aligned with the first S/D structure and the first S/D metal portion in the first direction;
• a third S/D metal portion comprising a same conductive material composition as that of the first and second S/D metal portions, overlying the dielectric layer, extending across the second elevation in the third direction, and aligned with the first S/D structure and the first S/D metal portion in the first direction;
• first and second vias overlying the dielectric layer;
• and
• a third via overlying the first S/D metal portion and electrically connected to the first via.

An integrated circuit (IC) device comprising:

• a transistor comprising:
• a first gate structure extending in a first direction;
• first and second source/drain (S/D) structures adjacent to the first gate structure in a second direction perpendicular to the first direction and extending across a first elevation in a third direction perpendicular to each of the first and second directions;
• and
• first and second S/D metal portions overlying the respective first and second S/D structures and extending across a second elevation in the third direction;
• a dielectric layer extending across the first elevation in the third direction;
• a third S/D metal portion comprising a same conductive material composition as that of the first and second S/D metal portions, overlying the dielectric layer, and extending across the second elevation in the third direction;
• a first via overlying the dielectric layer and overlying and electrically connected to a first end of the third S/D metal portion;
• a second via overlying the dielectric layer and overlying and electrically connected to a second end of the third S/D metal portion;
• and
• a third via overlying and electrically connected to the first S/D metal portion and electrically connected to the first via.