Semiconductor device and formation method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsBo-Jiun Lin, Tsung-En Lee, Tung Ying Lee, Chao-Ching Cheng
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Abstract
A method of forming a semiconductor device comprises the following steps. A dielectric layer is formed over a substrate. A 2D material layer is formed over the dielectric layer. An adhesion layer is formed over the 2D material layer. Source/drain electrodes are formed on opposite sides of the adhesion layer. A first high-k gate dielectric layer is formed over the adhesion layer, wherein the adhesion layer has a material different from a material of the first high-k gate dielectric layer.
Claims20
A semiconductor device, comprising:
- a substrate;
- a dielectric layer over the substrate;
- a 2D material layer over the dielectric layer;
- an adhesion layer over the 2D material layer;
- a gate dielectric structure over the adhesion layer, the gate dielectric structure comprising one or more dielectric layers;
- and
- source/drain electrodes over the 2D material layer.
A semiconductor device comprising:
- a substrate;
- a 2D material layer over the substrate;
- a source electrode and a drain electrode over the 2D material layer;
- an adhesion layer over the 2D material layer, wherein the adhesion layer is between the source electrode and the drain electrode;
- and
- a gate structure over the adhesion layer, wherein the gate structure comprises a gate dielectric structure and a gate electrode over the gate dielectric structure.
A semiconductor device comprising:
- a substrate;
- a 2D material layer over the substrate;
- a source electrode and a drain electrode over the substrate;
- an adhesion layer over the 2D material layer;
- and
- a gate structure over the adhesion layer between the source electrode and the drain electrode, wherein the gate structure comprises a gate dielectric structure and a gate electrode over the gate dielectric structure.
Dependencies are inferred from the claim text.