Fin cut and fin trim isolation for advanced integrated circuit structure fabrication

A method of fabricating an integrated circuit structure, the method comprising:

• forming a nanowire having a longest dimension along a direction between a first end and a second end;
• forming a gate structure comprising a gate electrode completely surrounding a region of the nanowire between the first end and the second end, the gate structure having a first side and a second side, the second side laterally opposite the first side;
• and
• forming a first isolation structure laterally spaced apart from the first side of the gate structure, the first isolation structure extending vertically along an entirety of the first end of the nanowire;
• and
• forming a second isolation structure laterally spaced apart from the second side of the gate structure, the second isolation structure extending vertically along an entirety of the second end of the nanowire.

A system, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, comprising:
• a nanowire having a longest dimension along a direction between a first end and a second end;
• a gate structure comprising a gate electrode completely surrounding a region of the nanowire between the first end and the second end, the gate structure having a first side and a second side, the second side laterally opposite the first side;
• and
• a first isolation structure laterally spaced apart from the first side of the gate structure, the first isolation structure extending vertically along an entirety of the first end of the nanowire;
• and
• a second isolation structure laterally spaced apart from the second side of the gate structure, the second isolation structure extending vertically along an entirety of the second end of the nanowire.