Gallium nitride sintered body and method for producing the same
AssigneeTosoh Corporation
InventorsYoshiro KUSUSE, Junya IIHAMA, Shinichi HARA, Masami MESUDA
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Abstract
Provided is at least one of a gallium nitride sintered body; a method for industrially producing the sintered body; a sputtering target including the sintered body; and a method for depositing a film with the sputtering target. With the gallium nitride sintered body, a sputtered film can be deposited at a faster deposition rate than with a gallium nitride sintered body produced by a hot-pressing process. A gallium nitride sintered body has a standard deviation of a porosity of 1.0% or less as determined from a scanning electron microscope image of a cross section of the gallium nitride sintered body.
Claims11
A gallium nitride sintered body having a standard deviation of a porosity of 1.0% or less as determined from a scanning electron microscope image of a cross section of the gallium nitride sintered body.
A gallium nitride green body having a Ga/(Ga+N) ratio of greater than 0.5.
Dependencies are inferred from the claim text.