Magneto-resistive random-access memory (mram) devices and methods of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsuan-Yi PENG, Cherng-Yu WANG, Jen-Po LIN, Hsiao-Kuan WEI
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Abstract
Embodiments of the present disclosure provide a magnetic tunnel junction (MTJ) structure for storing a data. In one embodiment, the MJT structure includes a first ferromagnetic layer, a second ferromagnetic layer disposed above the first ferromagnetic layer, a first dielectric layer disposed between and in contact with the first ferromagnetic layer and the second ferromagnetic layer, a plurality of metal particles disposed in contact with the second ferromagnetic layer, wherein the metal particles are distributed in a discrete and non-continuous manner, and a second dielectric layer disposed over the plurality of metal particles.
Claims20
A magnetic tunnel junction (MTJ) structure, comprising:
- a first ferromagnetic layer;
- a second ferromagnetic layer disposed above the first ferromagnetic layer;
- a first dielectric layer disposed between and in contact with the first ferromagnetic layer and the second ferromagnetic layer;
- a plurality of metal particles disposed in contact with the second ferromagnetic layer, wherein the metal particles are distributed in a discrete and non-continuous manner;
- and
- a second dielectric layer disposed over the plurality of metal particles.
A magnetic random access memory (MRAM) device, comprising:
- a bottom electrode disposed over a semiconductor substrate;
- a magnetic tunnel junction (MTJ) structure, comprising:
- a first ferromagnetic layer disposed over the bottom electrode;
- an insulating barrier layer disposed over the first ferromagnetic layer;
- a second ferromagnetic layer disposed over the insulating barrier layer;
- a dielectric layer disposed over the second ferromagnetic layer;
- and
- a first plurality of metal particles embedded within the dielectric layer and discretely disposed on a top surface of the second ferromagnetic layer in a non-continuous manner;
- and
- a top electrode disposed over the MTJ structure.
A magnetic random access memory (MRAM) device, comprising:
- a bottom electrode;
- a first ferromagnetic layer disposed over the bottom electrode;
- a barrier layer disposed over the first ferromagnetic layer;
- a second ferromagnetic layer disposed over the barrier layer;
- a dielectric layer disposed on the second ferromagnetic layer;
- a plurality of metal particles disposed in the dielectric layer;
- and
- a top electrode disposed over the dielectric layer.
Dependencies are inferred from the claim text.