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US 2025/0351544 A1Published application
Control of locos structure thickness without a mask
AssigneeTexas Instruments Incorporated
InventorsAbbas Ali, Christopher Scott Whitesell, John Christopher Shriner, Henry Litzmann Edwards
Life of this patent
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Abstract
An integrated circuit includes a gate electrode over a silicon substrate and a local oxidation of silicon (LOCOS) structure between the gate electrode and the silicon substrate. The LOCOS structure has bird's beak portions, peripheral portions between the bird's beak portions, and a central portion between the peripheral portions. The peripheral portions have a first thickness, and the central portion has a greater second thickness.
Claims1
An integrated circuit, comprising:
- a gate electrode over a silicon substrate;
- and
- a local oxidation of silicon (LOCOS) structure between the gate electrode and the silicon substrate, the LOCOS structure having bird's beak portions, peripheral portions between the bird's beak portions, and a central portion between the peripheral portions, the peripheral portions having a first thickness, and the central portion having a greater second thickness.
Dependencies are inferred from the claim text.