Semiconductor device
AssigneeMitsubishi Electric Corporation
InventorsTasuku SUMINO, Satoshi SUZUKI
Life of this patent
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Abstract
An epitaxial layer (2) is formed on a substrate (1). A field effect transistor (3) is formed on the epitaxial layer (2). A drain pad (8) is formed on the epitaxial layer (2). The drain pad (8) is connected to a drain electrode (5) of the field effect transistor (3). A back surface electrode (13) is formed on a back surface of the substrate (1) and connected to a source electrode (6) of the field effect transistor (3). A wire (16) is bonded to the drain pad (8). A cavity (17) is formed in the substrate (1) directly below the drain pad (8). The cavity (17) is not formed directly below a bonding portion of the wire (16).
Claims7
A semiconductor device comprising:
- a substrate;
- an epitaxial layer formed on the substrate;
- a field effect transistor formed on the epitaxial layer;
- a drain pad formed on the epitaxial layer and connected to a drain electrode of the field effect transistor;
- a back surface electrode formed on a back surface of the substrate and connected to a source electrode of the field effect transistor;
- and
- a wire bonded to the drain pad,
- wherein a cavity is formed in the substrate directly below the drain pad, and
- the cavity is not formed directly below a bonding portion of the wire.
Dependencies are inferred from the claim text.