Component Carrier, Method and Apparatus for Manufacturing the Component Carrier
AssigneeAT&S (Chongqing) Company Limited
InventorYc DENG
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Abstract
A component carrier including i) a stack having at least one electrically insulating layer structure and at least one electrically conductive layer structure; and ii) a via embedded in the stack, wherein the via has iia) a lower metal-filled part, and iib) an upper metal-filled part, wherein the upper metal-filled part is formed directly on the lower metal-filled part with an interface region in between, and wherein the interface region is substantially free of metal oxides, in particular copper oxides. Further, there is described a manufacture method and a manufacture apparatus with an electron attachment process.
Claims19
A component carrier, comprising:
- a stack comprising at least one electrically insulating layer structure and at least one electrically conductive layer structure;
- and
- a via at least partially embedded in the stack, wherein the via comprises:
- a lower metal-filled part, and
- an upper metal-filled part,
- wherein the upper metal-filled part is formed directly on the lower metal-filled part with an interface region in between, and
- wherein the interface region is substantially free of metal oxides.
A method of manufacturing a component carrier, the method comprising:
- forming a stack comprising at least one electrically insulating layer structure and at least one electrically conductive layer structure;
- forming a via hole at least partially in the stack;
- filling a lower part of the via hole with metal to provide a lower metal-filled part;
- processing the upper surface of the lower metal-filled part by electron attachment, thereby removing metal oxide;
- and
- filling an upper part of the via hole with further metal on the electron attachment processed upper surface of the lower metal-filled part, thereby providing an upper metal-filled part.
An apparatus for manufacturing a component carrier, the apparatus comprising:
- a drilling unit configured for forming a via hole in a stack that comprises at least one electrically insulating layer structure and at least one electrically conductive layer structure;
- a plating unit configured for filling a lower part of the via hole with metal, to provide a lower metal-filled part-, and filling an upper part of the via hole with further metal on the upper metal surface of the lower metal-filled part, to provide an upper metal-filled part;
- and
- an electron attachment unit configured for processing the upper surface of the lower metal-filled part by electron attachment.
Dependencies are inferred from the claim text.