Method for Producing at Least One Crack-Free SiC Piece

A SiC carrier wafer,

• wherein the SiC carrier wafer has a diameter of at least 7.5 cm
• wherein the SiC carrier wafer has a height between 200 μm and 500 μm,
• wherein the SiC carrier wafer comprises at least one one inner section,
• and
• wherein the SiC carrier wafer comprises an outer section, wherein the outer section surrounds the inner section,
• wherein the inner section consists of a part of a SiC growth substrate,
• wherein the inner section is formed by a crystal structure, wherein the crystal structure of the inner section is predominantly formed by a 3C crystal structure, and
• wherein the outer section is formed by a crystal structure, wherein the crystal structure of the outer section is predominantly formed by a 3C crystal structure and comprises crystallites extending in length direction of the individual crystallite more than 5 μm,
• wherein a bow of the SiC carrier wafer is below 50 μm, and/or wherein a warp of the SiC carrier wafer is below 50 μm,
• wherein the crystal structure of the inner section and the crystal structure of the outer section are Nitrogen doped, and comprises an electric resistivity <0.03 Ohm cm.