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US 2025/0338596 A1Published application
Semiconductor device with filling layer and method for fabricating the same
AssigneeNanya Technology Corporation
InventorYUAN-YUAN LIN
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Abstract
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a conductive structure including a conductive concave layer disposed on the substrate and a conductive filling layer disposed on the conductive concave layer, wherein the conductive concave layer includes a top surface having a V-shaped cross-sectional profile; and a top conductive layer disposed on the conductive structure. The conductive filling layer includes germanium or silicon germanium.
Claims15
A semiconductor device, comprising:
- a stacking structure disposed on a semiconductor substrate;
- a first sidewall spacer and a second sidewall spacer covering a sidewall of the stacking structure, wherein an air gap is sealed between the first and second sidewall spacers, wherein topmost ends of the first sidewall spacer, the air gap, and the second sidewall spacer and a top surface of the stacking structure are coplanar, and a top portion of the air gap is tapered toward the topmost end of the air gap;
- and
- a contact plug disposed between a pair of the stacking structures.
1 more element
Dependencies are inferred from the claim text.