High voltage device with boosted breakdown voltage
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHarry-Hak-Lay Chuang, Hsin Fu Lin, Tsung-Hao Yeh
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Abstract
An integrated circuit (IC) device comprises a high voltage semiconductor device (HVSD) on a frontside of a semiconductor body and further comprises an electrode on a backside of the semiconductor body opposite the frontside. The HVSD may, for example, be a transistor or some other suitable type of semiconductor device. The electrode has one or more gaps directly beneath the HVSD. The one or more gaps enhance the effectiveness of the electrode for improving the breakdown voltage of the HVSD.
Claims20
An integrated circuit (IC) device comprising:
- a semiconductor body comprising a front side and a backside;
- a high voltage semiconductor device (HVSD) formed in the front side;
- and
- a conductive layer and an insulating layer on the backside, wherein the insulating layer is between the conductive layer and the semiconductor body;
- wherein the conductive layer forms a contiguous electrode directly beneath the HVSD;
- the contiguous electrode has a gap directly beneath the HVSD;
- a first portion of the contiguous electrode is on a first side of the gap;
- and
- a second portion of the contiguous electrode is on a second side of the gap, opposite the first side of the gap.
An integrated circuit (IC) device comprising:
- a semiconductor body;
- a plurality of high voltage devices formed in the semiconductor body;
- an insulating layer under the semiconductor body;
- and
- one or more electrodes in a layer beneath the insulating layer;
- wherein each of the plurality of high voltage devices has a footprint beneath the semiconductor body;
- the one or more electrodes form a pattern that repeats within each footprint;
- and
- the pattern includes internal sidewall that define a gap within each footprint.
An integrated circuit (IC) device, comprising:
- a semiconductor body comprising a front side and a backside;
- a high voltage semiconductor device (HVSD) formed in the front side;
- and
- an electrode under the back side;
- wherein the electrode is beneath the HVSD;
- the electrode has internal sidewalls that surround a hole through the electrode;
- and
- two of the internal sidewalls on opposite sides of the hole are directly beneath the HVSD.
Dependencies are inferred from the claim text.