Gan hemt epitaxial wafer based on aln thick film and manufacturing method of the same
AssigneeWavelord Co., Ltd
InventorsJune O SONG, Hyun Chul Lim, Young Hun Han, Hyung Sun Yun
Life of this patent
Estimating the term…
Abstract
Embodiments according to the present invention are an AlN thick film-based GaN HEMT epitaxy wafer comprises a growth substrate made of a semi-insulating material or a conductive material, an AlN nucleation region grown on the growth substrate, an AlN stress control region grown on the AlN nucleation region and having an air void or an Al vacancy, an AlN buffer region grown on the AlN stress control region and not including the air void and the Al vacancy, and an active region grown on the AlN buffer region and including a GaN channel region and an AlGaN barrier region.
Claims10
An AlN thick film-based GaN HEMT epitaxy wafer, comprising:
- a growth substrate made of a semi-insulating material or a conductive material;
- an AlN nucleation region grown on the growth substrate;
- an AlN stress control region grown on the AlN nucleation region and having an air void or an Al vacancy;
- an AlN buffer region grown on the AlN stress control region and not including the air void and the Al vacancy;
- and
- an active region grown on the AlN buffer region and including a GaN channel region and an AlGaN barrier region.
Dependencies are inferred from the claim text.