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US 2025/0320232 A1Published application
Metal-containing precursors
AssigneeEntegris, Inc.
InventorDrew Michael Hood
Life of this patent
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Abstract
Methods for forming a vapor deposition precursor are provided. The method comprises contacting a metal halide compound, a Grignard reagent, and a carbodiimide compound to form the vapor deposition precursor. The vapor deposition precursor comprises at least one of an indium amidinate, a gallium amidinate, or any combination thereof. The vapor deposition precursor is formed without use of a pyrophoric compound. Various compositions comprising a vapor deposition precursor and related systems and devices are also provided.
Claims20
A method for forming a vapor deposition precursor, the method comprising:
- contacting a metal trihalide, a Grignard reagent, and a carbodiimide compound to form the vapor deposition precursor,
- wherein the metal trihalide comprises at least one of a gallium trihalide, an indium trihalide, or any combination thereof;
- wherein the vapor deposition precursor comprises at least one of a gallium amidinate, an indium amidinate, or any combination thereof.
A composition comprising:
- a vapor deposition precursor comprising a metal amidinate,
- wherein the metal amidinate comprises at least one of a gallium amidinate, an indium amidinate, or any combination thereof;
- wherein the metal amidinate having the characteristics defined by the following process step:
- contacting a metal trihalide, a Grignard reagent, and a carbodiimide compound to form the vapor deposition precursor;
- wherein the metal trihalide comprises at least one of a gallium trihalide, an indium trihalide, or any combination thereof.
2 more elements
Dependencies are inferred from the claim text.