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US 2025/0313482 A1Published application
Low temperature trichlorosilane hydrogenation
AssigneeAgc Carbon Inc.
InventorSumeet Gandhi
Life of this patent
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Abstract
A method for preparing trichlorosilane involves reacting silicone tetrachloride in a photo-assisted reactor, where reactant gases are fed through a gas diffusion electrode, and an electric current ionizes the reactant species in the presence of a catalyst. This process results in the formation of trichlorosilane at a temperature of less than 300° C.
Claims20
A method for preparation of trichlorosilane comprising:
- reacting silicone tetrachloride in a photo-assisted reactor, with one or more reactant gases fed through at least one gas diffusion electrode, wherein an electric current ionizes one or more reactant species with a catalyst;
- and
- forming the trichlorosilane in the photo-assisted reactor, wherein the photo-assisted reactor maintains a temperature of less than 300 C.
A method comprising:
- reacting, in a photo-assisted reactor, tetrachlorosilane and dimethylsilane in the presence of a catalyst of the formula R14QZ, wherein R1 is an organyl group, Q is phosphorus or nitrogen, and Z is chlorine to form at least HSiCl3, Me2SiCl2, and Me2SiHCl;
- removing the HSiCl3, Me2SiCl2, and Me2SiHCl from the photo-assisted reactor;
- hydrogenating at least a portion the Me2SiCl2 and the Me2SiHCl with at least one metal hydride to form Me2SiH2;
- and
- recycling the Me2SiH2 back into the photo-assisted reactor.
2 more elements
An electrosynthesis reactor comprising:
- at least one anode;
- a photo-assist device in fluid communication with the at least one anode, wherein the photo-assist device includes at least one of a UV light and an IR light;
- a cathode mount adjacent to the photo-assist device, wherein the cathode mount includes a gas exit;
- a gas diffusion electrode layer in fluid communication with the photo-assist device, wherein the gas diffusion electrode layer includes a catalyst;
- at least one bipolar plate in fluid communication with the gas diffusion electrode layer, wherein the at least one bipolar plate includes an HCl exhaust;
- a hydrophobic PTFE membrane adjacent to the gas diffusion electrode layer;
- and
- an internal reaction chamber including a cathode in fluid communication with the hydrophobic PTFE membrane, wherein the cathode includes at least chlorosilane vapor.
5 more elements
Dependencies are inferred from the claim text.