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US 2025/0311478 A1Published application
Method for manufacturing photodetector and method for manufacturing image sensor
AssigneeFUJIFILM Corporation
InventorsTakashi GOTO, Atsuko TABUCHI, Yasuhiro SAWAMURA
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Abstract
A method for manufacturing a photodetector and a method for manufacturing an image sensor includes forming a first electrode on a support; filtering a quantum dot dispersion liquid containing quantum dots having a maximal absorption in terms of absorbance in a wavelength range of 900 to 1700 nm, a ligand, and a solvent, and forming a semiconductor film containing quantum dots on the first electrode by using the filtered quantum dot dispersion liquid; and forming a second electrode on the semiconductor film.
Claims11
A method for manufacturing a photodetector, comprising:
- forming a first electrode on a support;
- filtering a quantum dot dispersion liquid containing quantum dots having a maximal absorption in terms of absorbance in a wavelength range of 900 to 1700 nm, a ligand, and a solvent, and forming a semiconductor film containing the quantum dots on the first electrode by using the filtered quantum dot dispersion liquid;
- and
- forming a second electrode on the semiconductor film.
1 more element
Dependencies are inferred from the claim text.