Pip structure and manufacturing methods of high voltage device and capacitor device having pip structure

A polysilicon-insulator-polysilicon (PIP) structure comprising:

• a first polysilicon region which is formed on a substrate;
• a first insulation region which is formed outside a first side of the first polysilicon region and adjoined to the first polysilicon region in a horizontal direction, wherein the first side and a second side are opposite sides of the first polysilicon region;
• and
• a second polysilicon region which is formed outside a third side of the first insulation region, such that the first polysilicon region, the first insulation region and the second polysilicon region are adjoined in sequence in the horizontal direction;
• wherein the second polysilicon region is formed outside the third side of the first insulation region by a first self-aligned process step;
• wherein the first insulation region is formed outside the first side of the first polysilicon region by a second self-aligned process step.