Semiconductor device structure with magnetic element
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChi-Cheng CHEN, Wei-Li HUANG, Chien-Chih KUO, Hon-Lin HUANG, Chin-Yu KU, Chen-Shien CHEN
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Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a magnetic element over the substrate. The semiconductor device structure also includes an isolation element over the magnetic element. The isolation element is wider than the magnetic element along a first direction, and the magnetic element is wider than the isolation element along a second direction. The semiconductor device structure further includes a conductive feature over the isolation element.
Claims20
A semiconductor device structure, comprising:
- a substrate;
- a magnetic element over the substrate;
- an isolation element over the magnetic element, wherein the isolation element is wider than the magnetic element along a first direction, and the magnetic element is wider than the isolation element along a second direction;
- and
- a conductive feature over the isolation element.
A semiconductor device structure, comprising:
- a substrate;
- a magnetic element over the substrate;
- a conductive feature extending across an edge of the magnetic element;
- and
- an isolation element between the magnetic element and the conductive feature, wherein the magnetic element is larger than the isolation element.
A semiconductor device structure, comprising:
- a substrate;
- a magnetic element over the substrate;
- a first conductive feature covering a first portion of the magnetic element;
- a second conductive feature covering a second portion of the magnetic element, wherein the first conductive feature is spaced apart from the second conductive feature;
- and
- an isolation element between the magnetic element and the first conductive feature.
Dependencies are inferred from the claim text.