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US 2025/0297366 A1Published application
Microwave plasma-enhanced chemical vapor deposition device
OwnerTsun Kwan YEUNGinventor
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Abstract
A Microwave Plasma-enhanced Chemical Vapor Deposition (MPCVD) Device is provided. The MPCVD device comprises a reacting chamber and a gas generator. The reacting chamber contains a substrate holder. The gas generator provides hydrogen to the reacting chamber. The purity of the hydrogen is higher than 4N. The reacting chamber is configured to facilitate a MPCVD process, and the gas generator is at the site of the MPCVD process.
Claims12
A Microwave Plasma-enhanced Chemical Vapor Deposition (MPCVD) Device, comprising:
- a reacting chamber containing a substrate holder;
- and
- a gas generator providing hydrogen to the reacting chamber,
- wherein a purity of the hydrogen is higher than 4N,
- wherein the reacting chamber is configured to facilitate a MPCVD process, and the gas generator is at the site of the MPCVD process.
2 more elements
Dependencies are inferred from the claim text.