Semiconductor device and method of manufacture

A method of manufacturing a semiconductor device, the method comprising:

• encapsulating each of a first interconnect structure and a second interconnect structure in a first encapsulant;
• bonding a first semiconductor die to the first interconnect structure and the second interconnect structure;
• encapsulating the first semiconductor die in a second encapsulant;
• and
• forming an underfill between the first semiconductor die and the first interconnect structure, and between the first semiconductor die and the second interconnect structure, wherein the underfill is also disposed over a portion of the first encapsulant that is disposed between a first sidewall of the first interconnect structure and a second sidewall of the second interconnect structure.

A method of manufacturing a semiconductor device, the method comprising:

• forming a reconstructed wafer with a first semi-finished substrate and a second semi-finished substrate embedded in a first encapsulant, wherein each of the first semi-finished substrate and the second semi-finished substrate comprises:
• a first substrate;
• and
• a conductive layer embedded in a dielectric layer, wherein the dielectric layer is arranged between the first substrate and a carrier substrate;
• electrically coupling a first semiconductor die to the first semi-finished substrate and the second semi-finished substrate;
• forming an underfill between the first semiconductor die and the reconstructed wafer;
• encasing the first semiconductor die with a second encapsulant;
• and
• bonding a plurality of external contacts to the first semi-finished substrate and the second semi-finished substrate.