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US 2025/0286533 A1Published application
Acoustic wave device with reduced acoustic loss
AssigneeSkyworks Solutions, Inc.
InventorsMichael David Hill, Rei Goto
Life of this patent
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Abstract
Aspects and embodiments disclosed herein include an acoustic wave device comprising a substrate, interdigital transducer (IDT) electrodes disposed on the substrate and configured to generate an acoustic wave in response to an electrical signal, the IDT electrodes including copper (Cu) and at least one of nickel (Ni) and beryllium (Be), and a passivation layer disposed on the substrate and the IDT electrodes.
Claims20
An acoustic wave device comprising:
- a substrate;
- interdigital transducer (IDT) electrodes disposed on the substrate and configured to generate an acoustic wave in response to an electrical signal, the IDT electrodes including copper (Cu) and at least one of nickel (Ni) and beryllium (Be);
- and
- a passivation layer disposed on the substrate and the IDT electrodes.
1 more element
A radio frequency module comprising:
- a packaging board configured to receive a plurality of components;
- and
- an acoustic wave device implemented on the packaging board, the acoustic wave device including a substrate, interdigital transducer (IDT) electrodes disposed on the substrate and configured to generate an acoustic wave in response to an electrical signal, the IDT electrodes including copper (Cu) and at least one of nickel (Ni) and beryllium (Be), and a passivation layer disposed on the substrate and the IDT electrodes.
A mobile device comprising:
- an antenna configured to receive a radio frequency signal;
- and
- a front end system configured to communicate with the antenna, the front end system including an acoustic wave device, the acoustic wave device including a substrate, interdigital transducer (IDT) electrodes disposed on the substrate and configured to generate an acoustic wave in response to an electrical signal, the IDT electrodes including copper (Cu) and at least one of nickel (Ni) and beryllium (Be), and a passivation layer disposed on the substrate and the IDT electrodes.
Dependencies are inferred from the claim text.