Nonvolatile memory device and operation method thereof

An operation method of a flash memory device that a first plane and a second plane, the method comprising:

• receiving a first input address corresponding to a first memory block in the first plane;
• replacing the first input address to a second physical address corresponding to a second memory block in the second plane different from the first plane, in response to the first memory block being a bad block;
• and
• controlling word lines connected to the second memory block in response to the second physical address,
• wherein a plurality of memory blocks in the first plane shares a plurality of first bit lines, a plurality of memory blocks in the second plane shares a plurality of second bit lines different from the plurality of first bit lines, and
• wherein a number of bad blocks in the second plane is less than a number of bad blocks in the first plane.

An operation method of a flash memory device including a plurality of planes, the method comprising:

• receiving a first input address corresponding to a first memory block in a first plane;
• replacing the first input address to a second physical address corresponding to a second memory block in a second plane different from the first plane, in response to the first memory block being a bad block;
• and
• controlling word lines connected to the second memory block in response to the second physical address,
• wherein the first memory block of the first plane is included in a first super block, and
• wherein a plurality of memory blocks in the second plane are not include in the first super block.