Isolation device with safety fuse
OwnerHonglin Guo, Thomas Dyer Bonifieldinventors
Life of this patent
Estimating the term…
Abstract
This description relates generally to semiconductor devices. A semiconductor device can include first and second conductive layers that can be positioned over a substrate, and at least one dielectric layer between the first and second conductive layers. The at least one dielectric layer can be positioned over at least a portion of the second conductive layer, and the first conductive layer can be positioned over a portion of the least one dielectric layer. The semiconductor device can further include a third conductive layer that can be positioned over the substrate and can be conductively connected to the second conductive layer and the substrate. The third conductive layer includes a fusible link.
Claims17
A method of forming an integrated circuit, comprising:
- forming first and second electrodes of a reactive device over a substrate, the first and second electrodes separated by a dielectric layer;
- and
- forming an interconnect network that conductively couples the first electrode to the substrate and to a first terminal of a fusible link.
A method of forming a semiconductor device comprising:
- forming first and second conductive layers over a semiconductor substrate;
- forming at least one dielectric layer between the first and second conductive layers, wherein the at least one dielectric layer is positioned over at least a portion of the second conductive layer, and the first conductive layer is positioned over a portion of the at least one dielectric layer;
- forming a third conductive layer positioned over the substrate and conductively connected to the second conductive layer and the substrate, wherein the third conductive layer includes a fusible link;
- connecting a first wire between a first package terminal of a and the first conductive layer;
- and
- forming a second wire between a second package terminal and the fusible link.
A method of forming an integrated circuit, comprising:
- forming first and second conductive layers positioned over a substrate;
- forming at least one dielectric layer between the first and second conductive layers, wherein the at least one dielectric layer is positioned over at least a portion of the second conductive layer, and the first conductive layer is positioned over a portion of the at least one dielectric layer;
- and
- forming a third conductive layer positioned over the substrate and conductively connected to the second conductive layer and the substrate, wherein the third conductive layer includes a fusible link having fuse body connected to two fuse terminals by corresponding tapered metal portions.
Dependencies are inferred from the claim text.