Methods of manufacturing bulk acoustic wave device including piezoelectric layer with recess
AssigneeSkyworks Global Pte. Ltd.
InventorsZongliang Cao, Jun Yu, Kwang Jae Shin
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Abstract
Aspects of this disclosure relate to methods of manufacturing a bulk acoustic wave device. Such methods can include forming a piezoelectric layer over a first electrode such that the piezoelectric layer has a recess. A second electrode can be deposited over the piezoelectric layer such that the recess is outside of a region in which the first electrode and the second electrode overlap and are on opposing sides of the piezoelectric layer. Related acoustic wave filters, multiplexers, radio frequency modules, radio frequency systems, wireless communication devices, and methods of filtering are disclosed.
Claims20
A method of manufacturing a bulk acoustic wave device, the method comprising:
- forming a piezoelectric layer over a first electrode such that the piezoelectric layer has a recess;
- and
- depositing a second electrode over the piezoelectric layer such that the recess is outside of a region in which the first electrode and the second electrode overlap and are on opposing sides of the piezoelectric layer.
A method of manufacturing a bulk acoustic wave device, the method comprising:
- forming a piezoelectric layer over a first electrode and an acoustic reflector such that the piezoelectric layer has a recess;
- depositing a raised frame structure;
- and
- depositing a second electrode over the piezoelectric layer such that the recess and the raised frame structure are outside of a region in which the first electrode and the second electrode overlap and are on opposing sides of the piezoelectric layer.
A method of manufacturing an acoustic wave filter, the method comprising:
- manufacturing a first bulk acoustic wave resonator by at least (i) forming a piezoelectric layer over a first electrode such that the piezoelectric layer has a recess and (ii) depositing a second electrode over the piezoelectric layer such that the recess is outside of a region of the first bulk acoustic wave resonator in which the first electrode and the second electrode overlap and are on opposing sides of the piezoelectric layer;
- and
- electrically connecting the first bulk acoustic wave resonator with a second bulk acoustic wave resonator of the acoustic wave filter.
Dependencies are inferred from the claim text.