Memory cells with sidewall and bulk regions in vertical structures
AssigneeMicron Technology, Inc.
InventorsLorenzo Fratin, Enrico Varesi, Paolo Fantini
Life of this patent
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Abstract
Methods, systems, and devices for techniques for memory cells with sidewall and bulk regions in vertical structures are described. A memory cell may include a first electrode, a second electrode, and a self-selecting storage element between the first electrode and the second electrode. The bulk region may extend between the first electrode and the sidewall region. The bulk region may include a chalcogenide material having a first composition, and the sidewall region may include the chalcogenide material having a second composition that is different than the first composition. Also, the sidewall region may separate the bulk region from the second electrode.
Claims21
(canceled)
An apparatus, comprising:
- a first electrode;
- a second electrode;
- and
- a storage element between the first electrode and the second electrode, the storage element comprising:
- a first region comprising a chalcogenide material having a first composition;
- and
- a second region between the first region and the first electrode, the second region comprising the chalcogenide material having a second composition that is different than the first composition.
An apparatus, comprising:
- a memory array comprising:
- a plurality of memory cells, each memory cell of the plurality of memory cells comprising a first electrode, a second electrode, and a storage element between the first electrode and the second electrode, the storage element comprising:
- a first region comprising a chalcogenide material having a first composition;
- and
- a second region between the first region and the first electrode, the second region comprising the chalcogenide material having a second composition that is different than the first composition.
Dependencies are inferred from the claim text.