Photodetector based on transverse dember effect and preparation method thereof

Abstract

Provided is a photodetector based on transverse Dember effect and a preparation method. The method includes: growing a tilted epitaxial layer on a tilted single-crystal substrate; preparing a patterned metal electrode pair on an upper surface of the tilted epitaxial layer; and connecting each metal electrode to one end of a metal wire via high temperature silver glue, and connecting the other end of the metal wire to a voltage signal acquisition device. There is an included angle between a crystallographic axis and a normal of the tilted epitaxial layer. Photoelectric detection with high responsivity is implemented by means of transverse Dember effect of the tilted epitaxial layer, which resolves problems of an existing photodetector such as a bias voltage needs to be applied, operations are complex, stability is poor, sensitivity is low, and the existing photodetector is easy to be interfered with an environment.

Dependencies are inferred from the claim text.