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US 2025/0234635 A1Published application
Monolithically integrated high voltage field effect and bipolar devices
AssigneeAnalog Devices International Unlimited Company
InventorEdward John Coyne
Life of this patent
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Abstract
An integrated circuit device comprises a metal-oxide-semiconductor (MOS) transistor comprising a gate stack formed over a channel region thereof and a bipolar junction transistor (BJT) comprising a layer stack formed over a collector region thereof. Some features of the MOS transistor and the BJT are co-fabricated such that they have common physical characteristics.
Claims23
An integrated circuit (IC) device, comprising:
- a metal-oxide-semiconductor (MOS) transistor comprising a heavily doped (HD) drain region, a gate stack, a drain region extension extending in a lateral direction from the HD drain region to an edge of the gate stack, and at least one drain field plate extending over at least 20% of a length of the drain region extension;
- and
- a bipolar junction transistor (BJT) comprising a heavily doped (HD) collector region, a layer stack, a drift region extension extending in the lateral direction from the HD collector region to an edge of the layer stack, and at least one field plate extending over at least 20% of the drift region extension,
- wherein the at least one drain field plate of the MOS transistor and the at least one field plate of the BJT have at least one common physical dimension.
1 more element
An integrated circuit (IC) device, comprising:
- a metal-oxide-semiconductor (MOS) transistor comprising a heavily doped (HD) drain region, a gate stack, a drain region extension extending in a lateral direction from the HD drain region to an edge of the gate stack, and a thick dielectric layer extending over the drain region extension;
- and
- a bipolar junction transistor (BJT) comprising a heavily doped (HD) collector region, a layer stack, a drift region extension extending in the lateral direction from the HD collector region to an edge of the layer stack, and a thick isolating dielectric layer extending over the drift region extension,
- wherein the thick dielectric layer of the MOS transistor and the thick isolating dielectric layer of the BJT have at least one common physical dimension.
1 more element
An integrated circuit (IC) device, comprising:
- a metal-oxide-semiconductor (MOS) transistor comprising a heavily doped (HD) drain region, a gate stack and a drain region extension extending in a lateral direction from the HD drain region to an edge of the gate stack, the gate stack comprising a gate layer extending over a gate dielectric layer and a portion of the drain region extension;
- and
- a bipolar junction transistor (BJT) comprising a heavily doped (HD) collector region, a layer stack and a drift region extension extending in the lateral direction from the HD collector region to an edge of the layer stack, and a reduced surface field (RESURF) layer extending over a RESURF dielectric layer and a portion of the drift region extension,
- wherein the gate layer and the RESURF layer have at least one common physical dimension.
1 more element
Dependencies are inferred from the claim text.