# US 2025/0221007 A1 · Semiconductor device and method of manufacturing the same

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2025/0221007 A1
- Document ID: US20250221007A1
- Status: Published application
- Kind: A1
- Application number: 19/002,148
- Filed: 2024-12-26
- Published: 2025-07-03
- Earliest claimed: 2023-12-27
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Byunghoon NA; Haeryong KIM; Woonghyeon PARK; Jaeho LEE; Jooho LEE
- Web page: https://patentgrep.com/patent/US20250221007A1

## CPC

- H10D 64/0112: {using conductive layers comprising silicides}
- H10D 64/647: {Schottky drain or source electrodes for IGFETs}
- H10D 62/151: {of IGFETs (of IGFETs having LDD or DDD structure H10D30/601; of thin film transistors H10D30/6713)}
- H10D 64/01: Manufacture or treatment
- H10D 64/62: Electrodes ohmically coupled to a semiconductor
- H10D 64/663: {the additional layers comprising a silicide layer contacting the layer of silicon, e.g. polycide gates}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

Provided is a semiconductor device. The semiconductor device includes a semiconductor layer including silicon, a first silicide layer in the semiconductor layer, and a second silicide layer provided on the first silicide layer. The first silicide layer includes a metal other than titanium, and the second silicide layer includes TiSi2 having a C54 crystallization structure. A contact resistance of the semiconductor device may be reduced.

## Claims

### Claim 1

A semiconductor device comprising:
a semiconductor layer including silicon;
a first silicide layer on the semiconductor layer; and
a second silicide layer including titanium and having a crystallization structure on the first silicide layer,
wherein the first silicide layer includes a metal other than titanium, and the second silicide layer includes TiSi2 having a C54 crystallization structure.

### Claim 2 (depends on 1)

The semiconductor device of claim 1, wherein the first silicide layer includes at least one of hafnium silicide, zirconium silicide, nickel silicide, and cobalt silicide.

### Claim 3 (depends on 1)

The semiconductor device of claim 1, wherein the first silicide layer has a thickness in a range from 3 Å to 30 Å.

### Claim 4 (depends on 1)

The semiconductor device of claim 1, wherein the first silicide layer has a crystallization structure.

### Claim 5 (depends on 1)

The semiconductor device of claim 1, wherein the second silicide layer has a thickness of 5 Å to 70 Å.

### Claim 6 (depends on 1)

The semiconductor device of claim 1, wherein the first silicide layer includes at least one of ZrSi, ZrSi2, Zr5Si3, or Zr3Si2.

### Claim 7 (depends on 1)

The semiconductor device of claim 1, wherein the second silicide layer has a Schottky barrier height of 0.7 eV or less.

### Claim 8 (depends on 1)

The semiconductor device of claim 1, further comprising:
a metal layer on the second silicide layer.

### Claim 9 (depends on 8)

The semiconductor device of claim 8, wherein the metal layer includes at least one of magnesium (Mg), aluminum (Al), scandium (Sc), titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), nickel (Ni), copper (Cu), zinc (Zn), gallium (Ga), zirconium (Zr), niobium (Nb), molybdenum (Mo), lead (Pd), argentum (Ag), cadmium (Cd), indium (In), tin (Sn), lanthanum (La), hafnium (Hf), tantalum (Ta), tungsten (W), iridium (Ir), platinum (Pt), aurum (Au), bismuth (Bi).

### Claim 10 (depends on 8)

The semiconductor device of claim 8, wherein
the metal layer includes a source electrode on one side surface of a channel layer and a drain electrode facing another side surface of the channel layer,
the second silicide layer includes a 2-1 silicide layer between the source electrode and the channel layer and a 2-2 silicide layer between the drain electrode and the channel layer, and
the first silicide layer includes a 1-1 silicide layer between the 2-1 silicide layer and the channel layer and a 1-2 silicide layer between the 2-2 silicide layer and the channel layer.

### Claim 11 (depends on 1)

The semiconductor device of claim 1, wherein the semiconductor layer includes at least one of single-crystalline or polycrystalline structure.

### Claim 12 (depends on 1)

The semiconductor device of claim 1, wherein the first silicide layer is undoped.

### Claim 13 (depends on 1)

The semiconductor device of claim 1, wherein the second silicide layer is undoped.

### Claim 14 (depends on 1)

The semiconductor device of claim 1, wherein the first silicide layer is in direct contact with the semiconductor layer.

### Claim 15 (depends on 1)

The semiconductor device of claim 1, wherein the first silicide layer is in direct contact with the second silicide layer.

### Claim 16 (depends on 1)

The semiconductor device of claim 1, wherein the semiconductor layer includes a well region doped to a first conductive type, and a source region and a drain region doped to a second conductive type electrically opposite to the first conductive type.

### Claim 17 (depends on 1)

The semiconductor device of claim 1, further comprising:
a gate electrode; and
a gate insulating layer on the gate electrode,
wherein the semiconductor layer includes a channel layer on the gate insulating layer.

### Claim 18 (depends on 1)

The semiconductor device of claim 1, wherein
the semiconductor layer includes a channel layer, and
the semiconductor device further comprises a gate insulating layer on an upper surface of the channel layer, and
a gate electrode on the gate insulating layer.

### Claim 19

A method of manufacturing a semiconductor device, the method comprising:
forming a semiconductor layer including silicon;
forming a first silicide layer on the semiconductor layer;
forming a second silicide layer including titanium on the first silicide layer; and
crystallizing the second silicide layer,
wherein the first silicide layer includes a metal other than titanium, and the second silicide layer includes TiSi2 having a C54 crystallization structure.

### Claim 20 (depends on 19)

The method of claim 19, wherein the first silicide layer includes ZrSi, ZrSi2, Zr5Si3, or Zr3Si2.

### Claim 21

(canceled)