Substrate processing apparatus, nozzle, method of processing substrate, method of manufacturing semiconductor device, and recording medium
AssigneeKokusai Electric Corporation
InventorYusaku OKAJIMA
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Abstract
There is provided a technique that includes: a process chamber in which at least one substrate is processed; at least one nozzle including a plurality of gas introduction passages configured to introduce a gas and a fluid communication portion configured to partially bring the plurality of gas introduction passages into fluid communication with each other; and a plurality of gas suppliers configured to supply the gas to the plurality of gas introduction passages.
Claims20
A substrate processing apparatus, comprising:
- a process chamber in which at least one substrate is processed;
- at least one nozzle including a plurality of gas introduction passages configured to introduce a gas and a fluid communication portion configured to partially bring the plurality of gas introduction passages into fluid communication with each other;
- and
- a plurality of gas suppliers configured to supply the gas to the plurality of gas introduction passages.
A nozzle configured to introduce a processing gas into a process chamber in which a substrate is processed, comprising:
- a plurality of gas introduction passages configured to introduce a gas;
- and
- a fluid communication portion configured to partially bring the plurality of gas introduction passages into fluid communication with each other.
A method of processing a substrate, comprising:
- loading the substrate into a process chamber;
- and
- supplying a gas into the process chamber from a nozzle including a plurality of gas introduction passages and a fluid communication portion configured to partially bring the plurality of gas introduction passages into fluid communication with each other.
Dependencies are inferred from the claim text.