# US 2025/0205751 A1 · Cleaning brush for semiconductor device and cleaning module and cmp equipment and post-cmp cleaning method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2025/0205751 A1 - Document ID: US20250205751A1 - Status: Published application - Kind: A1 - Application number: 18/792,279 - Filed: 2024-08-01 - Published: 2025-06-26 - Earliest claimed: 2023-12-20 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd. - Inventors: Gayoung Kim - Web page: https://patentgrep.com/patent/US20250205751A1 ## CPC - B08B 1/34: rotating about an axis parallel to the surface - H10P 70/277: {the processing being a planarisation of conductive layers} - B08B: CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract The present disclosure relates to a cleaning brush for a semiconductor device, a cleaning module for a semiconductor device, a chemical mechanical polishing (CMP) equipment, and a post-CMP cleaning method. An example cleaning brush for a semiconductor device includes a polymer with a stimulus-responsive ligand. An example cleaning module for a semiconductor device includes the cleaning brush. An example chemical mechanical polishing equipment includes the cleaning module. An example post-CMP cleaning method uses the cleaning brush, the cleaning module, or the chemical mechanical polishing equipment. ## Claims ### Claim 1 A cleaning brush for a semiconductor device, the cleaning brush comprising: a polymer with a stimulus-responsive ligand. ### Claim 2 (depends on 1) The cleaning brush of claim 1, wherein the stimulus-responsive ligand comprises a functional group that accompanies a change in a chemical structure, the chemical structure being reversible based on stimulation of external energy. ### Claim 3 (depends on 2) The cleaning brush of claim 2, wherein a binding force between the stimulus-responsive ligand and a metal ion is configured to vary based on the change in the chemical structure of the functional group, and the functional group is configured to adsorb or desorb the metal ion based on the stimulation of the external energy. ### Claim 4 (depends on 2) The cleaning brush of claim 2, wherein the change in the chemical structure of the functional group comprises a change from cis-structure to trans-structure and a change from the trans-structure to the cis-structure. ### Claim 5 (depends on 2) The cleaning brush of claim 2, wherein the change in the chemical structure of the functional group comprises a change from a non-ionic structure to a zwitterionic structure and a change from the zwitterionic structure to the non-ionic structure. ### Claim 6 (depends on 2) The cleaning brush of claim 2, wherein the stimulus-responsive ligand is configured to form a coordination bond with a metal ion. ### Claim 7 (depends on 2) The cleaning brush of claim 2, wherein the external energy comprises light, heat, electrical energy, or a combination thereof. ### Claim 8 (depends on 2) The cleaning brush of claim 2, wherein the functional group comprises a spiropyranyl group, a spirooxaginyl group, an oxazyl group, an azobenzyl group, a boron-dipyromethenyl group, a derivative thereof, or a combination thereof. ### Claim 9 (depends on 1) The cleaning brush of claim 1, wherein the polymer comprises a porous polymer, and the stimulus-responsive ligand is on a side chain of the porous polymer. ### Claim 10 (depends on 1) The cleaning brush of claim 1, wherein the polymer comprises polyvinyl alcohol with a spiropyranyl group, a spiroxazyl group, an oxazyl group, an azobenzyl group, a boron-dipyromethenyl group, a derivative thereof, or a combination thereof; polyurethane with a spiropyranyl group, a spiroxazyl group, an oxazyl group, an azobenzyl group, a boron-dipyromethenyl group, a derivative thereof, or a combination thereof; or a combination thereof. ### Claim 11 A cleaning brush for a semiconductor device, the cleaning brush comprising: a porous polymer having a spiropyranyl group, a spiroxazyl group, an oxazyl group, an azobenzyl group, a boron-dipyromethenyl group, a derivative thereof, or a combination thereof. ### Claim 12 (depends on 11) The cleaning brush of claim 11, wherein the porous polymer comprises polyvinyl alcohol, polyurethane, or a combination thereof. ### Claim 13 (depends on 1) The cleaning brush of claim 1, wherein heat, light, or electrical energy is supplied to the cleaning brush by energy source. ### Claim 14 (depends on 13) The cleaning brush of claim 13, wherein a first cleaning liquid configured to remove polished particles is supplied by a first nozzle. ### Claim 15 (depends on 14) The cleaning brush of claim 14, wherein a second cleaning liquid configured to remove the polished particles chemically desorbed from the cleaning brush is supplied by a second nozzle. ### Claim 16 (depends on 15) The cleaning brush of claim 15, wherein the first nozzle or the second nozzle is disposed inside the cleaning brush or is disposed outside the cleaning brush. ### Claim 17 (depends on 13) The cleaning brush of claim 13, wherein the cleaning brush is comprised in a chemical mechanical polishing (CMP) equipment, and the CMP equipment comprises a CMP module. ### Claim 18 (depends on 1) A post chemical mechanical polishing (post-CMP) cleaning method, comprising: supplying a first cleaning liquid to a polished surface where a CMP has been performed, contacting the polished surface with the cleaning brush for a semiconductor device of claim 1 that removes polished particles from the polished surface, separating the cleaning brush from the polished surface, and supplying external energy to the cleaning brush to cause the cleaning brush to chemically desorb the polished particles, the polished particles being chemically adsorbed on the cleaning brush. ### Claim 19 (depends on 18) The method of claim 18, comprising supplying a second cleaning liquid to the cleaning brush to physically separate the polished particles from the cleaning brush, the polished particles being chemically desorbed on the cleaning brush. ### Claim 20 (depends on 18) The method of claim 18, wherein the external energy is selected from light, heat, electric energy, or a combination thereof.