Voltage-Assisted Annealing to Alter Tunnel Junction Properties
AssigneeRigetti & Co, LLC
InventorsDavid Pappas, Mark Field, Eyob A. Sete, Joshua Yousouf Mutus, Xiqiao Wang
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Abstract
In a general aspect, junction properties of tunnel junctions are altered by voltage-assisted annealing processes. In some cases, a method includes obtaining a circuit comprising a tunnel junction, modifying a junction resistance of the tunnel junction by applying a voltage across the tunnel junction, and obtaining a measured value of the junction resistance. The tunnel junction may include a metal and a metal oxide.
Claims34
1-15. (canceled)
A method of performing a tuning process to modify a junction resistance of a tunnel junction, the method comprising:
- obtaining a fabricated circuit comprising the tunnel junction;
- applying, to the circuit, a voltage that modifies the junction resistance of the tunnel junction;
- and
- after applying the voltage, measuring the junction resistance of the tunnel junction.
31-33. (canceled)
A system comprising:
- a source measurement unit;
- and
- a controller communicably coupled to the source measurement unit, the controller configured to cause the source measurement unit to:
- modify a junction resistance of a tunnel junction by applying a voltage across the tunnel junction;
- and
- measure the junction resistance of the tunnel junction.
45-73. (canceled)
A method of altering a junction resistance of a tunnel junction, the method comprising
- obtaining a substrate comprising the tunnel junction;
- and
- performing an alternating-bias assisted annealing (ABAA) process on the tunnel junction, the alternating-bias assisted annealing process comprising applying a sequence of annealing pulses with alternating polarities and measurement pulses on the tunnel junction.
78-79. (canceled)
Dependencies are inferred from the claim text.