Luminescent diamond with negatively charged vacancies
AssigneeSchlumberger Technology Corporation
InventorYahua Bao
Life of this patent
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Abstract
Luminescent materials have red luminescent behavior after sintering using an HPHT process. Red luminescence is achieved with a temperature of 1475° C. to 1800° C. and potentially 1600° C. to 1750° C. with coarse sintered diamond powder having an average size greater than or equal to 100 nm. or more fine grain average grain sizes of at least 25 nm or at least 50 nm. The luminescent material has red luminescence as a result of NV− centers created through the HPHIT process which dominates over NV0 centers produced at lower temperatures. and over NVN centers produced at higher temperatures.
Claims27
A method for making luminescent diamond comprising:
- subjecting a volume of precursor diamond grains to a high-pressure/high-temperature (HPHT) condition at an elevated temperature between 1600° C. and 1800° C., and thereby causing the diamond grains to undergo plastic deformation to preferentially produce negatively charged nitrogen vacancy (NV−) defects in the diamond grains,
- wherein the resulting diamond material displays a level of luminescence intensity in a red wavelength spectrum that is greater than that of the precursor diamond grains.
A luminescent diamond material comprising:
- diamond particles that are mechanically interlocked together and combined with a pressure transfer media,
- wherein the luminescent diamond material includes diamond grains that have undergone plastic deformation through a high-pressure/high-temperature (HPHT) process, and wherein the luminescent diamond material displays a level of red luminescence greater than that of precursor diamond material used to form the luminescent diamond material as a result of a higher ratio of negatively charged nitrogen vacancies (NV−) to either or both of neutral charge nitrogen vacancies (NV0) and NVN defects.
-28. (canceled)
Dependencies are inferred from the claim text.