Bonding process for forming semiconductor device structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Hang Chang, I-Shi Wang, Jen-Hao Liu
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Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a first substrate including a first face and a second face opposite the first face. A second substrate is bonded to the first face of the first substrate such that the second face of the first substrate faces away from the second substrate. One or more recesses are arranged in the second face of the first substrate and are configured to compensate for thermal expansion or thermal contraction.
Claims20
A semiconductor device structure, comprising:
- a first die comprising a first face and a second face opposite the first face;
- a second die bonded to the first face of the first die such that the second face of the first die faces away from the second die;
- and
- one or more expansion trenches in the second face of the first die.
A semiconductor device structure, comprising:
- a first wafer including a plurality of predetermined die areas, the first wafer having a first face and a second face opposite the first face, wherein the plurality of predetermined die areas are spaced apart from each other by a plurality of predetermined scribe lines;
- a second wafer bonded to the first face of the first wafer;
- and
- a plurality of thermal expansion trenches disposed on the second face of the first wafer.
A method for forming a semiconductor device structure, comprising:
- receiving a first wafer comprising a first surface and a second surface opposite the first surface, wherein the first wafer comprises a trench in the first surface of the first wafer;
- receiving a second wafer;
- and
- bonding the first wafer to the second wafer such that the second surface of the first wafer faces towards the second wafer and the first surface including the trench faces away from the second wafer after bonding.
Dependencies are inferred from the claim text.