Quantum electron storage device and method of use
OwnerJohn Felten, SR.inventor
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Abstract
Quantum electron storage devices are provided. In some aspects, a device is provide with a working voltage of 50V or more, 90V or more, 100V or more, or from 90V to 150V. The device has an energy density of 300 Watt hours or more, 500 watt hours or more, or 1,000 watt hours or more per kilogram of quantum electron storage material at these working voltages. The device includes 1 or more layers of quantum electron storage material. A method of using the quantum electron storage devices includes a step of applying a working voltage of 50V or more, 90V or more, 100V or more, or from 90V to 150V to the device. The quantum electron storage devices described herein are particularly useful in laser weapons due to their high energy density and fast charge and discharge rates.
Claims20
A quantum electron storage device comprising:
- a storage layer, the storage layer comprising a metal foil and a quantum electron storage material;
- and
- a junction layer, the junction layer comprising:
- a first metal foil provided with a layer comprising a quantum electron storage material;
- and
- a second metal foil provided with a layer comprising a quantum electron storage material,
- wherein the first metal foil provided with a layer comprising a quantum electron storage material and the second metal foil provided with a layer comprising a quantum electron storage material are arranged so that the layers comprising a quantum electron storage material are in contact with one another and form a junction, and
- wherein the device has a working voltage 90V or more and an energy density of 300 watt hours or more per kilogram of quantum electron storage material.
Dependencies are inferred from the claim text.